| PART |
Description |
Maker |
| NTGD4169F NTGD4169FT1G |
30V 2.9A N-Ch with Schottky Barrier Diode TSOP6
Power MOSFET and Schottky Diode 30 V, 2.9 A, N−Channel with Schottky Barrier Diode, TSOP−6
|
ON Semiconductor
|
| NTHD4N02F NTHD4N02FT1G NTHD4N02FT1 NTHD4N02 |
Power MOSFET and Schottky Diode 20 V, 2.7A, N-Channel, w/1.0 A Schottky Barrier Diode, ChipFET™
|
ON Semiconductor
|
| FDFC3N108 FDFC3N108NL |
N-Channel 1.8V Specified PowerTrench MOSFET with Schottky Diode 3000 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
20V N-Channel 1.8V Specified PowerTrench MOSFET with Schottky Diode
|
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
| FDFMA2P853T |
Integrated P-Channel PowerTrench MOSFET and Scottky Diode -20V, -3.0A, 120mOhms
Integrated P-Channel PowerTrench? MOSFET and Schottky Diode
Integrated P-Channel PowerTrench垄莽 MOSFET and Schottky Diode
|
Fairchild Semiconductor
|
| NTMSD3P303R2 |
FETKY™ P-Channel Enhancement-Mode Power MOSFET and Schottky Diode Dual SO-8 Package
P−Channel Enhancement−Mode Power MOSFET and Schottky Diode Dual SO−8 Package
P-Channel Enhancement-Mode Power MOSFET and Schottky Diode Dual SO-8 Package(双P通道，增强模式，SO-8封装的功率MOSFET与肖特基二极
|
ON Semiconductor
|
| NTLJF3117PTAG |
Power MOSFET and Schottky Diode −20 V, −4.1 A, P−Channel, with 2.0 A Schottky Barrier Diode, 2x2 mm, uCool Package 2.3 A, 20 V, 0.135 ohm, P-CHANNEL, Si, POWER, MOSFET
|
ON Semiconductor
|
| NTLJF3117PTAG NTLJF3117P NTLJF3117PT1G |
Power MOSFET and Schottky Diode −20 V, −4.1 A, P−Channel, with 2.0 A Schottky Barrier Diode, 2x2 mm, uCool Package
|
ONSEMI[ON Semiconductor]
|
| BAS70-02W |
SENSOR VACUUM GAGE 1PSID
Silicon Schottky Diode
Schottky Diodes - Silicon AF Schottky diode for high-speed switching
|
INFINEON[Infineon Technologies AG]
|
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